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 制造装备 |
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Horizontal Furnace |
PROCESS
* Diffusion : Oxidation(Wet, Dry) / Annealing / Alloy / Pocl3
* LPCVD : Nitride / Poly / HTO / MTO / TEOS
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Specification : Specifications
ㆍWafer size : 100 ~ 300 mm
ㆍBatch size : 25 ~ 150
ㆍWafer loading : Auto / Manual
ㆍProcess Tube : 1 ~ 3
ㆍTemp control zone : 3
ㆍMaximum Temperature : 200 ~ 1200 ℃
ㆍTemp control method : Spike, Profile, Cascade
ㆍThermo couple Type : "R"
ㆍTemp Uniformity : ＜± 0.5
ㆍConstant Temp zone : ＞ 400 mm
ㆍPressure Control : Piezo Valve
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Horizontal Furnace |
PROCESS
* Diffusion : Oxidation(Wet, Dry) / Annealing / Alloy / Pocl3
* LPCVD : Nitride / Poly / HTO / MTO / TEOS
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Specification : Specifications
ㆍWafer size : 100 ~ 300 mm
ㆍBatch size : 25 ~ 150
ㆍWafer loading : Auto / Manual
ㆍProcess Tube : 1
ㆍTemp control zone : 3
ㆍMaximum Temperature : 200 ~ 1200 ℃
ㆍTemp control method : Spike, Profile, Cascade
ㆍThermo couple Type : "R"
ㆍTemp Uniformity : ＜± 0.5
ㆍConstant Temp zone : ＞ 400 mm
ㆍPressure Control : Piezo Valve
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Spin Rinser Dryer(SRD) |
Specification : Specifications
ㆍWafer size : 50 ~ 300 mm
ㆍBatch size : 25
ㆍMax RPM : 2800
ㆍMaximum Recipe : 5
ㆍVoltage : AC220V, 1Phase 60Hz
ㆍAMPS : 20
ㆍNitrogen Flow : 113 ~ 170 l/min
ㆍDI Water Flow : 5.7 ~ 7.6 l/min
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